High-purity tungsten target is mainly prepared by hot pressing, hot isostatic pressing and so on. And tungsten target with high purity and high density may be prepared by intermediate frequency sintering and pressure processing, but its grain size and grain homogeneity are not very well compared with the tungsten target produced by hot isostatic pressing.
High purity tungsten target has the characteristics of high temperature stability, high electron transfer resistance and high electron emission coefficient so that it is widely applied in the manufacturing of gate electrode, interconnect and diffusion barrier for large-scale semiconductor integrated circuits. Their requirements for the purity, impurity content, density, grain size and uniformity of grain structure are high.
During the preparation of high purity tungsten target, the purity of high-purity W powder can be analyzed by inductively coupled plasma mass spectrometry (ICP-MS). And high-purity W target product can generally be directly analyzed by glow discharge mass spectrometry (GDMS).
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